N-channel power MOSFET in a D2PAK package, featuring 30V drain-source breakdown voltage and 120A continuous drain current. Offers low 3.2mΩ drain-to-source resistance at a nominal 4V gate-source voltage. Operates with a maximum gate-source voltage of 20V and a maximum power dissipation of 300W. This surface-mount device boasts a maximum operating temperature of 175°C and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STB200NF03T4 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 120A |
| Current Rating | 120A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.6mm |
| Input Capacitance | 4.95nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 3.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Termination | SMD/SMT |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 30V |
| Width | 9.35mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STB200NF03T4 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
