N-Channel Power MOSFET, D2PAK package, featuring 40V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3.5mΩ maximum drain-source on-resistance. Operates with a 16V gate-source voltage and exhibits fast switching speeds with turn-on delay of 37ns and fall time of 80ns. Designed for surface mounting with a maximum power dissipation of 300W and a maximum operating temperature of 175°C. RoHS compliant.
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Stmicroelectronics STB200NF04L technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 120A |
| Current Rating | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 3.5MR |
| Dual Supply Voltage | 40V |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 6.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 3.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 37ns |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
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