The STB200NF04L-1 is a TO-262-3 packaged N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 120A and a drain to source breakdown voltage of 40V. The device features a drain to source resistance of 4.6mR and a maximum power dissipation of 300W. It is designed for through hole mounting and is not radiation hardened.
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Stmicroelectronics STB200NF04L-1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 4.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 6.4nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 3.8mR |
| RoHS Compliant | No |
| Series | STripFET™ II |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 37ns |
| RoHS | Not CompliantNo |
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