N-channel Power MOSFET featuring 900V drain-source breakdown voltage and 18.5A continuous drain current. Offers a low 0.25 Ohm typical drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 250W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and 40ns fall time.
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Stmicroelectronics STB21N90K5 technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 18.5A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 299mR |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 299MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.645nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 299mR |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 17ns |
| RoHS | Compliant |
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