N-channel Power MOSFET featuring 600 V drain-source voltage and a low 0.13 Ohm typical on-resistance. Delivers 21 A continuous drain current, optimized for high-efficiency switching applications. Encased in a D2PAK package for robust thermal performance.
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Technical Specifications
Stmicroelectronics STB28N60DM2 technical specifications.
Compliance
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Stmicroelectronics STB28N60DM2 Datasheet
Download the complete datasheet for Stmicroelectronics STB28N60DM2 to view detailed technical specifications.
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