N-channel Power MOSFET featuring 600 V drain-source voltage and a low 0.13 Ohm typical on-resistance. Delivers 21 A continuous drain current, optimized for high-efficiency switching applications. Encased in a D2PAK package for robust thermal performance.
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| Transistor polarity | N-channel |
| Drain-source voltage at maximum junction temperature | 650V |
| Drain-source breakdown voltage | 600 minV |
| Continuous drain current at Tcase 25°C | 21A |
| Continuous drain current at Tcase 100°C | 14A |
| Pulsed drain current | 84A |
| Static drain-source on-resistance | 0.13 typ, 0.16 maxΩ |
| Gate-source voltage | ±25V |
| Gate threshold voltage | 3 min, 4 typ, 5 maxV |
| Total power dissipation at Tcase 25°C | 170W |
| Operating junction temperature range | -55 to 150°C |
| Input capacitance | 1500 typpF |
| Output capacitance | 70 typpF |
| Reverse transfer capacitance | 1.6 typpF |
| Total gate charge | 34 typnC |
| Turn-on delay time | 16 typns |
| Turn-off delay time | 53 typns |
| Source-drain current | 21A |
| Thermal resistance junction-case | 0.74°C/W |
| Single pulse avalanche energy | 350mJ |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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