N-channel Power MOSFET featuring 600V drain-source voltage and 29A continuous drain current. This surface mount device offers a low 0.092 Ohm typical on-resistance (105mR max) and 3V threshold voltage. Designed for high efficiency, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 210W. The TO-263 package, measuring 10.75mm x 10.4mm x 4.6mm, is suitable for tape and reel packaging.
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Stmicroelectronics STB34NM60N technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.6mm |
| Input Capacitance | 2.722nF |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 105mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 106ns |
| Turn-On Delay Time | 17ns |
| Width | 10.4mm |
| RoHS | Compliant |
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