Automotive-grade N-channel power MOSFET featuring 600V drain-source breakdown voltage and 29A continuous drain current. This surface-mount device offers a low 93mΩ typical drain-source on-resistance and 105mΩ maximum. Operating across a wide temperature range of -55°C to 150°C, it boasts 210W maximum power dissipation and is packaged in a TO-263-3 (D2PAK) for efficient thermal management. Ideal for demanding applications, it includes fast switching characteristics with a 17ns turn-on delay and 67ns fall time.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power210W
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Technical Specifications
Stmicroelectronics STB36NM60N technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 105mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 105MR |
| Fall Time | 67ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.722nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 210W |
| Radiation Hardening | No |
| Rds On Max | 105mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 106ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB36NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STB36NM60N to view detailed technical specifications.
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