
N-channel SuperMESH™ PowerMOSFET featuring 600V drain-source breakdown voltage and 2.4A continuous drain current. This surface-mount device offers a low 3.6 Ohm (max) drain-source resistance and 45W power dissipation. Key switching characteristics include a 9ns turn-on delay and 14ns fall time. Packaged in a D2PAK for efficient thermal management, it operates from -55°C to 150°C and is RoHS compliant.
Sign in to ask questions about the Stmicroelectronics STB3NK60ZT4 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STB3NK60ZT4 technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 2.4A |
| Current Rating | 2.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.6mm |
| Input Capacitance | 311pF |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 600V |
| Width | 10.4mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STB3NK60ZT4 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
