This automotive-grade high-voltage N-channel power MOSFET belongs to the MDmesh DM2 fast-recovery diode series. It is rated for 600 V drain-source breakdown voltage, 34 A continuous drain current at 25 °C case temperature, and 250 W total power dissipation. The device features low on-resistance, fast reverse recovery behavior, low gate charge, and high dv/dt ruggedness for demanding high-efficiency switching converters. It is AEC-Q101 qualified, 100% avalanche tested, and supplied in a D²PAK package for tape-and-reel assembly.
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| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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