Stmicroelectronics
STB4NK60Z-1
N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in I2PAK package
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power70W
Quick Jump:
Technical Specifications
Stmicroelectronics STB4NK60Z-1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
600V
Fall Time
16.5ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
510pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
2R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
29ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB4NK60Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB4NK60Z-1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
