
The STB55NF03LT4 is a surface mount N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -60°C. It has a continuous drain current of 55A and a drain to source breakdown voltage of 30V. The device has a maximum power dissipation of 80W and is packaged in a D2PAK case. It is RoHS compliant and has an input capacitance of 1.265nF.
Stmicroelectronics STB55NF03LT4 technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.265nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -60°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 28ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STB55NF03LT4 to view detailed technical specifications.
No datasheet is available for this part.
