The STB5NK50Z-1 is a 500V N-CHANNEL MOSFET with a continuous drain current of 4.4A and a maximum power dissipation of 70W. It features a TO-262-3 package and is mounted through a hole. The device operates within a temperature range of -55°C to 150°C and is RoHS compliant. The STB5NK50Z-1 has an input capacitance of 535pF and a drain to source resistance of 1.5R.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STB5NK50Z-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 535pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB5NK50Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB5NK50Z-1 to view detailed technical specifications.
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