N-channel power MOSFET featuring 24V drain-source breakdown voltage and 60A continuous drain current. This surface-mount device offers a low 8.5mΩ drain-source resistance at 10Vgs. Key switching characteristics include a 10ns turn-on delay and 16ns fall time. With a maximum power dissipation of 70W and an operating temperature range of -55°C to 175°C, it is supplied in a D2PAK package.
PackageD2PAK
Current Rating60A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB60NH02LT4 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 60A |
| Current Rating | 60A |
| Drain to Source Breakdown Voltage | 24V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 24V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 24V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB60NH02LT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB60NH02LT4 to view detailed technical specifications.
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