Stmicroelectronics
STB6NK60Z-1
N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STB6NK60Z-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 905pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB6NK60Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB6NK60Z-1 to view detailed technical specifications.
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