N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 5.8A continuous drain current. This surface-mount device offers a low 1.56 Ohm typical drain-source on-resistance and 140W maximum power dissipation. The D2PAK package houses a single element with a 3.75V threshold voltage and fast switching characteristics, including a 20ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied on tape and reel.
PackageD2PAK
Current Rating5.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB6NK90ZT4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
5.8A
Current Rating
5.8A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
900V
Drain-source On Resistance-Max
1.56R
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
1.35nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Surface Mount
Nominal Vgs
3.75V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
20ns
Turn-On Delay Time
17ns
DC Rated Voltage
900V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB6NK90ZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB6NK90ZT4 to view detailed technical specifications.
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