N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 65A continuous drain current. This single-element transistor boasts a low 19.5mΩ maximum drain-source on-resistance at 10V gate-source voltage. Housed in a D2PAK (TO-263) surface-mount package with gull-wing leads, it offers a 3-pin configuration with a tab for enhanced thermal performance. Operating temperature range spans from -55°C to 175°C, with a maximum power dissipation of 150W.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STB70N10F4 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 9.35(Max) |
| Package Height (mm) | 4.6(Max) |
| Seated Plane Height (mm) | 4.83(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 65A |
| Maximum Drain Source Resistance | 19.5@10VmOhm |
| Typical Gate Charge @ Vgs | 85@10VnC |
| Typical Gate Charge @ 10V | 85nC |
| Typical Input Capacitance @ Vds | 5800@25VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Stmicroelectronics STB70N10F4 Datasheet
Download the complete datasheet for Stmicroelectronics STB70N10F4 to view detailed technical specifications.
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