N-Channel MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This surface-mount component offers a low 6.5mΩ drain-to-source resistance (Rds On Max) and 300W power dissipation. Designed for high-efficiency switching, it boasts fast switching times with a turn-on delay of 32ns and fall time of 80ns. Packaged in a D2PAK for robust thermal performance, it operates across a wide temperature range of -55°C to 175°C and is RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STB80NF55L-06T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
6.5mR
Drain to Source Voltage (Vdss)
55V
Fall Time
80ns
Gate to Source Voltage (Vgs)
16V
Height
4.6mm
Input Capacitance
4.85nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
6.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
1V
Turn-Off Delay Time
135ns
Turn-On Delay Time
32ns
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB80NF55L-06T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB80NF55L-06T4 to view detailed technical specifications.
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