
N-Channel MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This surface-mount component offers a low 6.5mΩ drain-to-source resistance (Rds On Max) and 300W power dissipation. Designed for high-efficiency switching, it boasts fast switching times with a turn-on delay of 32ns and fall time of 80ns. Packaged in a D2PAK for robust thermal performance, it operates across a wide temperature range of -55°C to 175°C and is RoHS compliant.
Stmicroelectronics STB80NF55L-06T4 technical specifications.
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