P-channel Power MOSFET featuring 80A continuous drain current and a -55V drain-to-source breakdown voltage. This surface-mount device offers a low 18mΩ drain-source on-resistance and a maximum power dissipation of 300W. Operating across a wide temperature range from -55°C to 175°C, it is packaged in a D2PAK for efficient thermal management. The component is RoHS compliant and designed for high-current switching applications.
PackageD2PAK
Current Rating-300mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STB80PF55T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Current Rating
-300mA
Drain to Source Breakdown Voltage
-55V
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
18mR
Dual Supply Voltage
55V
Fall Time
80ns
Gate to Source Voltage (Vgs)
16V
Height
4.6mm
Input Capacitance
5.5nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
165ns
Turn-On Delay Time
35ns
DC Rated Voltage
-60V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB80PF55T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB80PF55T4 to view detailed technical specifications.
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