8.6A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
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Stmicroelectronics STB9NB50 technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -60°C |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-On Delay Time | 19ns |
| RoHS | Compliant |
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