N-CHANNEL POWER MOSFET featuring 700V drain-source breakdown voltage and 7.5A continuous drain current. Offers 1.2Ω maximum drain-source resistance (Rds On) and 115W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, this RoHS compliant component exhibits a 3.75V threshold voltage and fast switching times with a 22ns turn-on delay and 13ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STB9NK70Z-1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STB9NK70Z-1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 700V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 10.75mm |
| Input Capacitance | 1.37nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 22ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STB9NK70Z-1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
