N-CHANNEL POWER MOSFET featuring 700V drain-source breakdown voltage and 7.5A continuous drain current. Offers 1.2Ω maximum drain-source resistance (Rds On) and 115W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, this RoHS compliant component exhibits a 3.75V threshold voltage and fast switching times with a 22ns turn-on delay and 13ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power115W
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Technical Specifications
Stmicroelectronics STB9NK70Z-1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
700V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
700V
Fall Time
13ns
Gate to Source Voltage (Vgs)
30V
Height
10.75mm
Input Capacitance
1.37nF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
115W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
115W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
45ns
Turn-On Delay Time
22ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB9NK70Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB9NK70Z-1 to view detailed technical specifications.
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