N-CHANNEL POWER MOSFET featuring 700V drain-source breakdown voltage and 7.5A continuous drain current. Offers 1.2Ω maximum drain-source resistance (Rds On) and 115W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, this RoHS compliant component exhibits a 3.75V threshold voltage and fast switching times with a 22ns turn-on delay and 13ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power115W
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Technical Specifications
Stmicroelectronics STB9NK70Z-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 700V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 10.75mm |
| Input Capacitance | 1.37nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 22ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB9NK70Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB9NK70Z-1 to view detailed technical specifications.
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