N-channel SuperMESH™ Power MOSFET featuring 900V drain-to-source breakdown voltage and 8A continuous drain current. This surface-mount device offers a low 1.1 Ohm typical drain-to-source resistance and 160W maximum power dissipation. Packaged in a D2PAK, it boasts fast switching characteristics with a 22ns turn-on delay and 11ns fall time. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component is ideal for high-voltage applications.
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Stmicroelectronics STB9NK90Z technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.3R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.115nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 1.3R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 900V |
| RoHS | Compliant |
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