N-channel SuperMESH™ Power MOSFET featuring 900V drain-to-source breakdown voltage and 8A continuous drain current. This surface-mount device offers a low 1.1 Ohm typical drain-to-source resistance and 160W maximum power dissipation. Packaged in a D2PAK, it boasts fast switching characteristics with a 22ns turn-on delay and 11ns fall time. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component is ideal for high-voltage applications.
PackageD2PAK
Current Rating8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB9NK90Z technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
1.3R
Drain to Source Voltage (Vdss)
900V
Fall Time
11ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.115nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
1.3R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
55ns
Turn-On Delay Time
22ns
DC Rated Voltage
900V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB9NK90Z Datasheet
Download the complete datasheet for Stmicroelectronics STB9NK90Z to view detailed technical specifications.
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