Dual N-channel power MOSFET, 30V drain-source breakdown voltage, 6A continuous drain current, and 25mΩ maximum drain-source resistance. Features 20ns turn-on delay, 32ns turn-off delay, and 25ns fall time. Operates with a 12V gate-source voltage and has an input capacitance of 800pF. Packaged in a RoHS compliant TSSOP-8 surface-mount package, with a maximum power dissipation of 1.5W and an operating temperature range of -55°C to 150°C.
PackageTSSOP
Current Rating6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STC6NF30V technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 25ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 800pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STC6NF30V Datasheet
Download the complete datasheet for Stmicroelectronics STC6NF30V to view detailed technical specifications.
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