Dual N-channel power MOSFET, 30V drain-source breakdown voltage, 6A continuous drain current, and 25mΩ maximum drain-source resistance. Features 20ns turn-on delay, 32ns turn-off delay, and 25ns fall time. Operates with a 12V gate-source voltage and has an input capacitance of 800pF. Packaged in a RoHS compliant TSSOP-8 surface-mount package, with a maximum power dissipation of 1.5W and an operating temperature range of -55°C to 150°C.
PackageTSSOP
Current Rating6A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STC6NF30V technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
6A
Current Rating
6A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
30V
Fall Time
25ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Input Capacitance
800pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Package Quantity
4000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
25mR
RoHS Compliant
Yes
Series
STripFET™ II
Turn-Off Delay Time
32ns
Turn-On Delay Time
20ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STC6NF30V Datasheet
Download the complete datasheet for Stmicroelectronics STC6NF30V to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
