N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Offers a low 5.5mΩ drain-source resistance (Rds On) and 110W maximum power dissipation. Designed for surface mounting in a TO-252-3 (DPAK-3) package, this RoHS compliant component boasts fast switching with turn-on delay of 9ns and fall time of 35ns. Operates across a wide temperature range from -55°C to 175°C.
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Stmicroelectronics STD100N03LT4 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.06nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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