N-CHANNEL Power MOSFET, TO-252 package, offering 60A continuous drain current and 24V drain-to-source breakdown voltage. Features a low 4.8mΩ maximum drain-source on-resistance. Operates with a gate-to-source voltage up to 20V and boasts a maximum power dissipation of 100W. This surface mount component is RoHS compliant and designed for demanding applications.
PackageTO-252-3
Current Rating60A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD100NH02LT4 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 60A |
| Current Rating | 60A |
| Drain to Source Breakdown Voltage | 24V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 24V |
| Drain-source On Resistance-Max | 4.8mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.94nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 4.8mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 60ns |
| DC Rated Voltage | 24V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD100NH02LT4 Datasheet
Download the complete datasheet for Stmicroelectronics STD100NH02LT4 to view detailed technical specifications.
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