P-channel MOSFET for power switching applications. Features a -60V drain-source breakdown voltage and a maximum continuous drain current of 10A. Offers a low 180mΩ typical drain-source on-resistance. Packaged in a DPAK surface-mount case, this device operates from -55°C to 175°C with a 35W power dissipation. Compliant with RoHS standards.
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| Package/Case | DPAK |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 180MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 35W |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VI |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 16.5ns |
| RoHS | Compliant |
These are design resources that include the Stmicroelectronics STD10P6F6
onsemi product discontinuance notice PD24792XB for various MOSFETs and discrete parts. Includes last time buy (Dec 30, 2022) and ship dates (Jun 30, 2023) plus replacements.
