P-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 10A continuous drain current. Offers low 180mΩ drain-source on-resistance at a nominal Vgs of -4V. Designed for surface mount applications in a DPAK package, this component operates from -65°C to 175°C with a maximum power dissipation of 40W. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 10ns.
PackageDPAK
Current Rating-10A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STD10PF06T4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
10A
Current Rating
-10A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
200mR
Dual Supply Voltage
-60V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
2.4mm
Input Capacitance
850pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Surface Mount
Nominal Vgs
-4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
-4V
Turn-Off Delay Time
40ns
Turn-On Delay Time
20ns
DC Rated Voltage
-60V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD10PF06T4 Datasheet
Download the complete datasheet for Stmicroelectronics STD10PF06T4 to view detailed technical specifications.
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