The STD11NM60N-1 is a 600V N-CHANNEL MOSFET with a continuous drain current of 10A. It features a drain to source breakdown voltage of 600V and a drain to source resistance of 450 milliohms. The device has a fall time of 12 nanoseconds and a gate to source voltage of 25V. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The STD11NM60N-1 is packaged in a TO-251-3 case and is available in quantities of 75 per rail or tube.
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| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 850pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 50ns |
| RoHS | Compliant |
