N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low 3.1mOhm drain-source on-resistance at VGS=10V, 3.6mR typical. Designed for surface mounting in a DPAK package, this component boasts a maximum power dissipation of 110W and operates across a wide temperature range of -55°C to 175°C. Includes fast switching characteristics with a 15ns turn-on delay and 45ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STD120N4LF6 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4MR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.4mm |
| Input Capacitance | 4.3nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 15ns |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD120N4LF6 Datasheet
Download the complete datasheet for Stmicroelectronics STD120N4LF6 to view detailed technical specifications.
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