N-channel power MOSFET featuring 60V drain-source breakdown voltage and 12A continuous drain current. This component offers a low 100mΩ typical drain-source on-resistance and is housed in a TO-251-3 IPAK package for through-hole mounting. Key electrical characteristics include a 2V threshold voltage, 350pF input capacitance, and fast switching times with a 10ns turn-on delay and 13ns fall time. Rated for a maximum power dissipation of 30W, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
PackageTO-251-3
Resistance100mR
Current Rating12A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STD12NF06L-1 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
12A
Current Rating
12A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
100mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
350pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
Resistance
100mR
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
2V
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD12NF06L-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD12NF06L-1 to view detailed technical specifications.
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