N-Channel Power MOSFET, DPAK package, offering 500V drain-source breakdown voltage and 11A continuous drain current. Features low 380mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 100W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 14ns. RoHS compliant and lead-free.
PackageDPAK
Current Rating11A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STD12NM50N technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
380mR
Dual Supply Voltage
500V
Fall Time
14ns
Gate to Source Voltage (Vgs)
25V
Height
2.4mm
Input Capacitance
940pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Nominal Vgs
3V
On-State Resistance
380mR
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1kW
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Termination
SMD/SMT
Turn-Off Delay Time
60ns
Turn-On Delay Time
15ns
DC Rated Voltage
500V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD12NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STD12NM50N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.