N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. Offers a low 198mΩ typical drain-source on-resistance, with a maximum of 220mΩ. Designed for surface mounting in a DPAK package, this component boasts a 110W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 9ns fall time and 36ns turn-on delay time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STD18N65M5 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 198mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 220mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.4mm |
| Input Capacitance | 1.24nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 36ns |
| Width | 6.2mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD18N65M5 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
