N-channel power MOSFET featuring 100V drain-source breakdown voltage and 25A continuous drain current. Offers low 30mΩ drain-source on-resistance at a nominal 2.5V gate-source voltage. Designed for surface mount applications in a DPAK package, this component operates from -55°C to 175°C with a maximum power dissipation of 100W. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 20ns.
PackageDPAK
Voltage100V
Current17A
Current Rating25A
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Technical Specifications
Stmicroelectronics STD25NF10LT4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
25A
Current
17A
Current Rating
25A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
35mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
16V
Height
2.4mm
Input Capacitance
1.71nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Nominal Vgs
2.5V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
100W
Rds On Max
35mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
2.5V
Turn-Off Delay Time
58ns
Turn-On Delay Time
20ns
Voltage
100V
DC Rated Voltage
100V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD25NF10LT4 Datasheet
Download the complete datasheet for Stmicroelectronics STD25NF10LT4 to view detailed technical specifications.
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