N-channel power MOSFET featuring 100V drain-source breakdown voltage and 25A continuous drain current. This surface-mount device offers a low 33mΩ typical drain-source on-resistance, with a maximum of 38mΩ. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 100W. The MOSFET is housed in a DPAK package, suitable for tape and reel packaging.
PackageDPAK
Current Rating25A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD25NF10T4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
25A
Current Rating
25A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
33mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
38mR
Dual Supply Voltage
100V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
2.4mm
Input Capacitance
1.55nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
100W
Radiation Hardening
No
Rds On Max
38mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
60ns
Turn-On Delay Time
17ns
DC Rated Voltage
100V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD25NF10T4 Datasheet
Download the complete datasheet for Stmicroelectronics STD25NF10T4 to view detailed technical specifications.
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