N-channel MOSFET, 100V drain-source breakdown voltage, 25A continuous drain current, and 38mΩ maximum drain-source on-resistance. Features a 100W power dissipation and operates within a -55°C to 175°C temperature range. Surface mountable in a DPAK package, this component offers fast switching with a 17ns turn-on delay and 15ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power100W
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Technical Specifications
Stmicroelectronics STD26NF10 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 38MR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.55nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD26NF10 Datasheet
Download the complete datasheet for Stmicroelectronics STD26NF10 to view detailed technical specifications.
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