N-channel SuperMESH™ Power MOSFET featuring 1000V drain-source breakdown voltage and 1.85A continuous drain current. Offers a low 8.5 Ohm maximum drain-source on-resistance and 70W power dissipation. This surface-mount device in a DPAK package operates from -55°C to 150°C and includes Zener protection. RoHS compliant with a 3.75V threshold voltage.
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Stmicroelectronics STD2NK100Z technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 1.85A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 8.5R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 8.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.4mm |
| Input Capacitance | 499pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 8.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 41.5ns |
| Turn-On Delay Time | 7.2ns |
| Width | 6.2mm |
| RoHS | Compliant |
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