N-Channel POWER MOSFET featuring 60V drain-source breakdown voltage and 28A continuous drain current. This surface-mount device offers a low 20mΩ drain-source on-resistance and 70W power dissipation. Designed with a DPAK package and STripFET™ II technology, it operates from -55°C to 175°C. Key electrical characteristics include a 4V threshold voltage and 1.75nF input capacitance.
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Stmicroelectronics STD30NF06T4 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 28A |
| Current Rating | 28A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.75nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
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