N-channel power MOSFET featuring 60V drain-source breakdown voltage and 35A continuous drain current. Offers low on-resistance with a maximum of 17mΩ at 10Vgs. Designed for surface mounting in a TO-252 package, this component boasts 80W maximum power dissipation and operates from -55°C to 175°C. Key switching characteristics include a 20ns turn-on delay and 20ns fall time.
PackageTO-252
Current Rating35A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STD35NF06LT4 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
35A
Current Rating
35A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
17mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
15V
Height
2.4mm
Input Capacitance
1.7nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
80W
Radiation Hardening
No
Rds On Max
17mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
1V
Turn-Off Delay Time
40ns
Turn-On Delay Time
20ns
DC Rated Voltage
60V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD35NF06LT4 Datasheet
Download the complete datasheet for Stmicroelectronics STD35NF06LT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
