N-channel power MOSFET featuring 60V drain-source breakdown voltage and 35A continuous drain current. Offers low on-resistance with a maximum of 17mΩ at 10Vgs. Designed for surface mounting in a TO-252 package, this component boasts 80W maximum power dissipation and operates from -55°C to 175°C. Key switching characteristics include a 20ns turn-on delay and 20ns fall time.
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| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 17mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 2.4mm |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 60V |
| Width | 6.2mm |
| RoHS | Compliant |
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