N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 35A continuous drain current. Offers low 18mΩ drain-source on-resistance and 80W maximum power dissipation. Designed for surface mounting in a DPAK package, this component boasts fast switching times with a 16ns turn-on delay and 15ns fall time. Operating temperature range spans from -55°C to 175°C, with RoHS compliance and lead-free construction.
PackageDPAK
Current Rating35A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD35NF06T4 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
35A
Current Rating
35A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
20mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
2.4mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
55W
Radiation Hardening
No
Rds On Max
20mR
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
36ns
Turn-On Delay Time
16ns
DC Rated Voltage
60V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD35NF06T4 Datasheet
Download the complete datasheet for Stmicroelectronics STD35NF06T4 to view detailed technical specifications.
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