N-channel SuperMESH™ Power MOSFET featuring 500V drain-source breakdown voltage and 2.3A continuous drain current. This through-hole component offers a low 3.3 Ohm typical drain-source resistance and 45W maximum power dissipation. Key switching characteristics include an 8ns turn-on delay and 14ns fall time. Operates across a wide temperature range from -55°C to 150°C, housed in a TO-251-3 IPAK package.
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Stmicroelectronics STD3NK50Z-1 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 3.3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 280pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 3.3R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 8ns |
| RoHS | Compliant |
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