N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. Offers a typical on-resistance of 3.8 Ohms and a maximum of 4.5 Ohms. Designed for through-hole mounting in a TO-251-3 (IPAK) package, this RoHS compliant component boasts a maximum power dissipation of 70W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and a 40ns fall time.
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Stmicroelectronics STD3NK80Z-1 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.2mm |
| Input Capacitance | 485pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 17ns |
| Width | 2.4mm |
| RoHS | Compliant |
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