N-Channel Power MOSFET, TO-252 DPAK package, featuring 600V drain-source breakdown voltage and 3A continuous drain current. Offers a low 1.5 Ohm maximum drain-source on-resistance. Designed for surface mounting with a maximum power dissipation of 42W. Includes fast switching characteristics with a 9ns turn-on delay and 10.5ns fall time. Operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Stmicroelectronics STD3NM60T4 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 10.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.4mm |
| Input Capacitance | 324pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 600V |
| Width | 6.2mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD3NM60T4 to view detailed technical specifications.
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