N-channel SuperMESH™ Power MOSFET featuring 500V drain-to-source breakdown voltage and 3A continuous drain current. This device offers a low 2.7 Ohm typical drain-to-source resistance and 45W maximum power dissipation. Designed for through-hole mounting in a TO-251-3 IPAK package, it exhibits fast switching characteristics with 10ns turn-on delay and 11ns fall time. Operating temperature range spans from -55°C to 150°C, with RoHS compliance.
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Stmicroelectronics STD4NK50Z-1 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.2mm |
| Input Capacitance | 310pF |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 10ns |
| Width | 2.4mm |
| RoHS | Compliant |
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