N-channel SuperMESH™ Power MOSFET featuring 500V drain-to-source breakdown voltage and 3A continuous drain current. This device offers a low 2.7 Ohm typical drain-to-source resistance and 45W maximum power dissipation. Designed for through-hole mounting in a TO-251-3 IPAK package, it exhibits fast switching characteristics with 10ns turn-on delay and 11ns fall time. Operating temperature range spans from -55°C to 150°C, with RoHS compliance.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STD4NK50Z-1 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
2.7R
Drain to Source Voltage (Vdss)
500V
Fall Time
11ns
Gate to Source Voltage (Vgs)
30V
Height
6.2mm
Input Capacitance
310pF
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
2.7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
21ns
Turn-On Delay Time
10ns
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD4NK50Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STD4NK50Z-1 to view detailed technical specifications.
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