STMICROELECTRONICS

STD4NK50Z-1

Datasheet

500V N-CH MOSFET 3A 2.7 Ohm IPAK Through Hole

Stmicroelectronics

STD4NK50Z-1

Name: STD4NK50Z-1 Stmicroelectronics
Brand: Stmicroelectronics
SKU: STD4NK50Z-1

500V N-CH MOSFET 3A 2.7 Ohm IPAK Through Hole

N-channel SuperMESH™ Power MOSFET featuring 500V drain-to-source breakdown voltage and 3A continuous drain current. This device offers a low 2.7 Ohm typical drain-to-source resistance and 45W maximum power dissipation. Designed for through-hole mounting in a TO-251-3 IPAK package, it exhibits fast switching characteristics with 10ns turn-on delay and 11ns fall time. Operating temperature range spans from -55°C to 150°C, with RoHS compliance.

PackageTO-251-3

MountingThrough Hole

PolarityN-CHANNEL

Power45W

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Technical Specifications

Stmicroelectronics STD4NK50Z-1 technical specifications.

General

Package/Case	TO-251-3
Continuous Drain Current (ID)	3A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	2.7R
Drain to Source Voltage (Vdss)	500V
Fall Time	11ns
Gate to Source Voltage (Vgs)	30V
Height	6.2mm
Input Capacitance	310pF
Length	6.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	45W
Mount	Through Hole
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	45W
Radiation Hardening	No
Rds On Max	2.7R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	SuperMESH™
Threshold Voltage	3.75V
Turn-Off Delay Time	21ns
Turn-On Delay Time	10ns
Width	2.4mm