N-channel Power MOSFET featuring 950V drain-to-source breakdown voltage and 3.5A continuous drain current. Offers a low 2 Ohm typical drain-to-source resistance, with a maximum of 2.5 Ohm. Designed for surface mounting in a DPAK package, this component boasts fast switching characteristics with turn-on delay of 12ns and fall time of 25ns. Maximum power dissipation is 70W, operating within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD5N95K5 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
3.5A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
950V
Fall Time
25ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
220pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2.5R
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
32ns
Turn-On Delay Time
12ns
Weight
0.139332oz
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD5N95K5 Datasheet
Download the complete datasheet for Stmicroelectronics STD5N95K5 to view detailed technical specifications.
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