STMICROELECTRONICS

STD5NK50Z-1

Datasheet

Stmicroelectronics

STD5NK50Z-1

Name: STD5NK50Z-1 Stmicroelectronics
Brand: Stmicroelectronics
SKU: STD5NK50Z-1

500V 4.4A N-CH MOSFET, 1.5R, TO-251

N-channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 4.4A continuous drain current. Offers 1.5 ohm drain-to-source resistance (Rds On Max) and 70W power dissipation. This through-hole component, housed in a TO-251-3 package, exhibits a 3.75V threshold voltage and fast switching characteristics with 15ns turn-on delay and 15ns fall time. Operating temperature range is -55°C to 150°C.

PackageTO-251-3

MountingThrough Hole

PolarityN-CHANNEL

Power70W

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Technical Specifications

Stmicroelectronics STD5NK50Z-1 technical specifications.

General

Package/Case	TO-251-3
Continuous Drain Current (ID)	4.4A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	1.5R
Drain to Source Voltage (Vdss)	500V
Fall Time	15ns
Gate to Source Voltage (Vgs)	30V
Height	6.2mm
Input Capacitance	535pF
Length	6.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	70W
Mount	Through Hole
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	70W
Radiation Hardening	No
Rds On Max	1.5R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	SuperMESH™
Threshold Voltage	3.75V
Turn-Off Delay Time	32ns
Turn-On Delay Time	15ns
Width	2.4mm