
The STD5NM50-1 is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 7.5A and a drain to source breakdown voltage of 500V. The device features a drain to source resistance of 800mR and a gate to source voltage of 30V. It is packaged in a TO-251 case and is available in a through hole mount configuration. The device is RoHS compliant and has a power dissipation of 100W.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STD5NM50-1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 800mR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.2mm |
| Input Capacitance | 415pF |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| RoHS Compliant | Yes |
| Turn-On Delay Time | 16ns |
| Width | 2.4mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STD5NM50-1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
