N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 7.5A continuous drain current. Offers low 800mΩ typical drain-source on-resistance. Designed for surface mount applications in a TO-252 package, with a maximum power dissipation of 100W. Includes fast switching characteristics with a 6ns fall time and 16ns turn-on delay.
PackageTO-252
Current Rating7.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STD5NM50T4 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | 7.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 800mR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.4mm |
| Input Capacitance | 415pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 500V |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STD5NM50T4 Datasheet
Download the complete datasheet for Stmicroelectronics STD5NM50T4 to view detailed technical specifications.
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