N-channel power MOSFET featuring 60V drain-source breakdown voltage and 60A continuous drain current. Offers a low 14mΩ typical drain-source on-resistance at 4V nominal gate-source voltage. Designed for surface mounting in a TO-252 (DPAK) package, this component supports a maximum power dissipation of 110W and operates within a temperature range of -55°C to 175°C. RoHS compliant with fast switching characteristics, including 16ns turn-on and 20ns fall times.
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Stmicroelectronics STD60NF06T4 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 16mR |
| Dual Supply Voltage | 60V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.4mm |
| Input Capacitance | 1.81nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 16ns |
| Width | 6.2mm |
| RoHS | Compliant |
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