N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 5A continuous drain current. Offers a low 0.8 Ohm typical drain-source on-resistance and 45W power dissipation. Packaged in a surface-mount DPAK with a 363pF input capacitance and fast switching times including a 7ns turn-on delay. Operates across a wide temperature range of -55°C to 150°C and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STD7NM60N technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
900mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Height
2.4mm
Input Capacitance
363pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
900mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
26ns
Turn-On Delay Time
7ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD7NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STD7NM60N to view detailed technical specifications.
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