N-channel Power MOSFET, TO-252 package, featuring 24V drain-source breakdown voltage and 80A continuous drain current. Offers a low 5mΩ maximum drain-source on-resistance. Designed for surface mounting with a maximum power dissipation of 100W and operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 20ns fall time and 47ns turn-off delay. RoHS compliant and lead-free.
Stmicroelectronics STD95NH02LT4 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 24V |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 24V |
| Drain-source On Resistance-Max | 5mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.07nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 47ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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