N-Channel Power MOSFET featuring 180A continuous drain current and 100V drain-to-source breakdown voltage. Offers a low 6mΩ drain-to-source resistance. Designed for chassis mounting with a maximum power dissipation of 360W and an operating temperature range of -55°C to 150°C. Includes 2.5kV isolation voltage and is RoHS compliant.
PackageSOT
Current Rating180A
MountingChassis Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STE180NE10 technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
180A
Current Rating
180A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
6mR
Drain to Source Voltage (Vdss)
100V
Fall Time
440ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
21nF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360W
Mount
Chassis Mount
Nominal Vgs
3V
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
360W
Rds On Max
6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
430ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STE180NE10 Datasheet
Download the complete datasheet for Stmicroelectronics STE180NE10 to view detailed technical specifications.
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