N-Channel Power MOSFET featuring 180A continuous drain current and 100V drain-to-source breakdown voltage. Offers a low 6mΩ drain-to-source resistance. Designed for chassis mounting with a maximum power dissipation of 360W and an operating temperature range of -55°C to 150°C. Includes 2.5kV isolation voltage and is RoHS compliant.
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Stmicroelectronics STE180NE10 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 180A |
| Current Rating | 180A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 440ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 21nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Chassis Mount |
| Nominal Vgs | 3V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 430ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
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